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    Halide Perovskite Single Crystals and Photodetectors: Research Progress and Challenges 
    SUN Yue, HUANG Xiao-rui , HE Sheng-rong, XING Jun
    Progress in Physics    2024, 44 (5): 209-242.   DOI: 10.13725/j.cnki.pip.2024.05.001
    Abstract1905)      PDF (15745KB)(1898)      

    In recent years, metal halide perovskite materials have made great scientific progress in the field of light detection, photoelectric conversion, and light emission due to their excellent optical and electrical properties (such as high absorption coefficient, long carrier diffusion length, small exciton binding energy, high defect tolerance, and adjustable band gap, etc.), and low-cost solution preparation process. In recent decades, scientific research on the preparation and optimization of perovskite single crystals has been promoted driven by their advantages compared to polycrystalline perovskite films. These advantages include longer carrier lifetime, higher carrier mobility, longer diffusion length, and lower trap density. High-quality halide perovskite single crystals have been widely used in important applications such as photodetection. This review focuses on the recent advancements in photodetector technology using various forms and chemical compositions of halide perovskite single crystals, including single crystal bulks and single crystal thin films. Firstly, we systematically review the preparation and optimization progress of halide perovskite single crystals, with a focus on the latest progress in triple cations hybrid perovskite single crystals. After that, a comprehensive introduction was given to the research status of various types of photodetectors based on perovskite single crystals. Finally, the current challenges and future development prospects in the research field of halide perovskite single crystal photodetector are summarized in order to promote rapid progress and development in this field.

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    Recent Progress in Ultrafast Spin Dynamics in Two-Dimensional van der Waals Antiferromagnets
    LI Jin-yang , WU Fang-liang , ZHANG Qi
    Progress in Physics    2024, 44 (6): 293-308.   DOI: 10.13725/j.cnki.pip.2024.06.003
    Abstract1084)      PDF (4771KB)(1414)      

    Antiferromagnets exhibit high-speed spin responses in the terahertz frequency range and robustness against external magnetic fields, making them promising for nextgeneration high-speed, high-density spintronic devices. Recently, two-dimensional van der Waals magnetic systems, which possess rich antiferromagnetic ground states, have gained significant attention and serve as ideal platforms for studying low-dimensional antiferromagnetic physics. Detecting and controlling ultrafast spin dynamics in two-dimensional antiferromagnetic systems will lay the foundation for high-speed spintronic device applications. Antiferromagnets have no net macroscopic magnetization, making traditional optical methods, such as magneto-optical effects, challenging for detecting antiferromagnetic order in equilibrium states. However, in non-equilibrium states, the instantaneous magnetization generated by antiferromagnetic spin dynamics allows the use of time-resolved magneto-optical Kerr effect to detect coherent spin precession in antiferromagnets. Additionally, techniques such as linear dichroism spectroscopy, terahertz emission spectroscopy, and second harmonic generation have been employed in studying the dynamics of two-dimensional antiferromagnets. This paper introduces recent experimental progress on ultrafast spin dynamics in two-dimensional van der Waals antiferromagnetic systems, and briefly describes the coherent magnon excitations and corresponding mechanisms in two-dimensional antiferromagnets, including inverse magneto-optical effects/stimulated Raman scattering, orbital excitations, and exciton coupling. Furthermore, this paper discusses the critical slowing down of spin dynamics due to spin-lattice coupling effects and the amplification of coherent acoustic phonons.

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    Image Sensor Based on Halide Perovskite
    ZHANG Qiang, DONG Hao-tian, BAO Chun-xiong
    Progress in Physics    2024, 44 (6): 278-292.   DOI: 10.13725/j.cnki.pip.2024.06.002
    Abstract917)      PDF (5446KB)(677)      

    Image sensors have extensive applications in both industrial and everyday settings. For example, X-ray sensors are widely used in medical imaging and security screening; visible light sensors are essential in facial recognition and smart devices; near-infrared sensors are crucial for biometric identification. Currently, these image sensors mainly utilize photodetectors based on silicon, germanium, or III-V group semiconductors. However, these sensors exhibit certain limitations, such as low light utilization efficiency in color image sensors and the occurrence of moiré patterns. Metal halide perovskites have emerged as a promising material for high-performance photodetectors due to their excellent optoelectronic properties, including high light absorption coefficients, tunable bandgaps, and high defect tolerance. This review summarizes the research advancements in image sensors based on metal halide perovskites, evaluates the current performance gap between these sensors and commercial devices, and suggests potential improvements to bridge this gap.

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    Working Memory: Mechanisms and Modeling Approaches
    YANG Fan, QIAN Rui-xin, WANG Tao
    Progress in Physics    2024, 44 (5): 243-258.   DOI: 10.13725/j.cnki.pip.2024.05.002
    Abstract867)      PDF (2967KB)(1037)      

    Working memory, a cornerstone of human cognition, allows us to temporarily hold and manipulate information. The delayed response experiment is a fundamental tool for understanding working memory. By inserting a delay between the presentation of stimuli and the behavioral decision, researchers can probe the neural mechanisms underlying information maintenance and manipulation during this delay period. This review delves into the delayed response paradigm and introduces attractor dynamics as a potential mechanism for working memory function. We then systematically explore two common methods for analyzing working memory networks: trajectory tracking, and energy landscape and flux theory. Finally, we summarize the key features of these two dynamical approaches and provide an outlook for future directions of working memory research.

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    Investigation on the Electrical and Thermal Transport Properties of BiCuXO (X=S, Se, Te) Crystals
    TIAN Hao, DONG Song-tao, LI Yi-chi, LÜ Yang-yang, ZHOU Jian, CHEN Yan-bin, YAO Shu-hua
    Progress in Physics    2024, 44 (6): 259-277.   DOI: 10.13725/j.cnki.pip.2024.06.001
    Abstract851)      PDF (10894KB)(666)      

    BiCuXO (X=S, Se, Te), a layered oxide material, has garnered significant attention due to its exceptional electrical transport properties and inherently low thermal conductivity, positioning it as a prospective candidate for high-performance thermoelectric applications. The optimization of material physical properties is intrinsically linked to an in-depth investigation of the crystallographic properties. This study initially presents a meticulous account of the growth procedures for BiCuXO crystals, elucidating the enhancement of electrical transport characteristics through the modulation of carrier concentrations via growth methodologies and elemental doping. A comparative analysis with ceramic samples documented in the literature is also provided. Subsequently, the paper delves into the electrical and thermal transport properties of BiCuXO crystals. The electrical transport properties encompass conductive behavior, scattering mechanisms, and magnetic resistance evolution. The thermal transport performance is mainly studied through inelastic neutron scattering and Raman experiments, combined with first principles calculations to investigate the physical mechanism of its extremely low thermal conductivity. The paper culminates with an exposition on the application of BiCuSeO crystals in photothermal electricity, harnessing the thermoelectric effect. By summarizing the growth methodologies of BiCuXO crystals and examining their electrical, thermal, and photothermal properties, this paper endeavors to offer theoretical insights and experimental guidance for the enhancement of BiCuXO material performance.

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    Research Progress on Two-Dimensional Multiferroic Materials and Their Magnetoelectric Properties
    ZHENG Hongqian , HU Ting , HUANG Chengxi , DU Yongping , WAN Yi
    Progress in Physics    2025, 45 (3): 105-117.   DOI: 10.13725/j.cnki.pip.2025.03.001
    Abstract683)      PDF (9286KB)(1395)      

    In recent years, multiferroic materials, which possess both ferromagnetic and ferroelectric properties, have attracted intense attention from researchers due to their novel and rich physical characteristics, as well as their broad potential applications in fields such as information storage and sensor technologies. As understanding of the properties of multiferroic materials deepens, researchers have begun to explore their behavior at smaller scales, particularly focusing on two-dimensional (2D) materials. Compared to three-dimensional (3D) materials, 2D materials, owing to their unique structural features and significant size effects, often exhibit more superior performance in terms of mechanical, optical, thermal, and magnetic properties. However, it is noteworthy that current research on 2D multiferroic materials is primarily concentrated on theoretical predictions, with experimental progress lagging behind. In this context, this paper first briefly reviews the development history of multiferroic materials, then elaborates on the characteristics and advantages of 2D materials, and discusses the potential applications of 2D multiferroic materials. Subsequently, the paper provides an overview of the current research status, covering related physical phenomena and mechanisms, experimental preparation methods, performance regulation technologies, and characterization techniques. Furthermore, this paper also enumerates potential 2D multiferroic materials predicted by theory and, based on this, delves into the challenges faced by current research and future directions for development. 

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    Two-Dimensional Transistors beyond Silicon Counterparts: From Theory to Experiment
    LI Hong , XU Lin , QIU Chenguang , LU Jing
    Progress in Physics    2025, 45 (3): 118-131.   DOI: 10.13725/j.cnki.pip.2025.03.002
    Abstract652)      PDF (2085KB)(848)      

    Due to the severe short-channel effects, silicon-based transistors cannot work well when the gate length is shorter than 10 nm. Moore’s law is at risk of failure. Compared to bulk semiconductor materials, two-dimensional (2D) materials own better electrostatic features and higher carrier mobilities. To describe the transport properties of transistors at the nanometer scale, the first-principles quantum transport simulation based on density functional theory coupled with non-equilibrium Green’s function method is the most precise theoretical tool. The device performances of ideal 2D transistors are predicted to surpass those of silicon-based transistors based on the first-principles quantum transport simulation, which can meet the International Technology Roadmap for Semiconductors (ITRS) and International Roadmap for Device and Systems (IRDS) requirements for the next decade and extend Moore’s law to sub-10 nm gate lengths . We review dramatic experimental breakthroughs on 2D transistors in the recent two years, including shrinking the gate length to the Angstrom scale, descending the electrode contact resistance to the quantum limit, and fabricating high-quality and ultrathin dielectric. When Ohmic contacts and high-quality ultrathin dielectric layers are simultaneously realized, theoretically predicted superior performances beyond silicon are observed in 10-nmgate InSe transistors experimentally. 

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    A Brief History of Electronic Development
    SHI Feng , LIU Jin-hua , ZHANG Ling-cui , XU Yue , LOU You-xin , SHEN Yan , ZHAO Jin-bo
    Progress in Physics    2025, 45 (2): 79-104.   DOI: 10.13725/j.cnki.pip.2025.02.003
    Abstract621)      PDF (516KB)(1556)      

    Electron is an inseparable part of atom. The ancients believed that atoms could not be divied, and it was not until the late 19th century that Thomson discovered the existence of electron, which proved that atom is redividable. After that, the complex and challenging journey to uncover the volatility of electrons, electron spin, and positrons led to groundbreaking discoveries, which resulted in numerous of Nobel Prizes were awarded in Physics. The discovery of electron played an important role in promoting the birth of quantum mechani. It was through the meticulous examination of atomic structure models that the scientists progressively ventured into the realms of quantum mechanics and quantum field theory. Similarly, electrons have played a positive role in promoting our understanding of various materials, leading to the development of to many theories, such as Lorentz’s free electron theory, Sommerfeld model, and band theory. Especially band theory has led to a revolution in modern electronic technology, ushering humanity into the information age. 

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    Second-Order Topological Insulators in 2D Electronic Materials 
    FENG Xiao-ran , NIU Cheng-wang ∗ , HUANG Bai-biao , DAI Ying
    Progress in Physics    2025, 45 (1): 1-31.   DOI: 10.13725/j.cnki.pip.2025.01.001
    Abstract568)      PDF (11565KB)(483)      

    Higher-order band topology not only enriches our understanding of topological phases but also unveils pioneering lower-dimensional boundary states, which harbors substantial potential for next-generation device applications. The distinct electronic configurations and tunable attributes of two-dimensional materials position them as a quintessential platform for the realization of second-order topological insulators (SOTIs). This article provides an overview of the research progress in SOTIs within the field of two-dimensional electronic materials, focusing on the characterization of higher-order topological properties and the numerous candidate materials proposed in theoretical studies. These endeavors not only enhance our understanding of higher-order topological states but also highlight potential material systems that could be experimentally realized. 

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    Research Progress on the Influence of Terahertz Waves on Neurotransmitter Synaptic Transmission
    CHEN Chen , DING Hong-ming , MA Yu-qiang
    Progress in Physics    2025, 45 (1): 32-46.   DOI: 10.13725/j.cnki.pip.2025.01.002
    Abstract387)      PDF (2539KB)(516)      

    Terahertz waves are a type of electromagnetic wave between microwaves and infrared waves. Due to its physical properties such as strong penetration, non-ionization and strong absorption, and the ability to achieve non-contact regulation of synaptic transmission, it has shown great application prospects. The synaptic transmission process is closely related to neurodegenerative diseases. Understanding the response of terahertz waves to the synaptic transmission process has a guiding role in the prevention and treatment of related diseases. This paper first introduces the physical properties of terahertz waves, biological effects and related concepts of synaptic transmission in detail, and then focuses on the influence of terahertz waves on the synaptic transmission process, namely the presynaptic, synaptic cleft and postsynaptic stages. Finally, the potential application of terahertz waves in the future synaptic transmission process is summarized and prospected.

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    Mass Production of High-Quality Single-Wall Carbon Nanotubes with Controllable Conductive Properties
    YANG Ke-han , WANG Chao , YUAN Guo-wen , GAO Li-bo
    Progress in Physics    2025, 45 (1): 47-54.   DOI: 10.13725/j.cnki.pip.2025.01.003
    Abstract382)      PDF (3199KB)(436)      

    Single-wall carbon nanotubes (SWCNTs) are highly promising due to their exceptional electrical conductivity, mechanical strength, and thermal properties. Currently, the floating catalyst chemical vapor deposition (FCCVD) method is a common approach for large-scale production of SWCNTs. However, the purity and quality of SWCNTs obtained by this method are insufficient, and the electrical properties of the samples are poorly controllable. The coexistence of metallic single-walled carbon nanotubes (m-SWCNTs) and semiconducting single-walled carbon nanotubes (s-SWCNTs) limits further applications. To achieve continuous growth of high-quality, high-purity SWCNTs with a controllable electrical property, this paper proposes a method that involves placing a plug to retain SWCNTs in the high-temperature zone for sustained growth and applying an electric field to selectively grow SWCNTs with a single electrical property, ultimately resulting in high-purity semiconducting-enriched SWCNTs. We systematically analyze the purity of SWCNTs and the proportion of s-SWCNTs using optical images, thermogravimetric analysis, and scanning electron microscopy. This work provides a solution for the large-scale production of high-quality, high-purity SWCNTs and is expected to accelerate the industrial application of SWCNTs.

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    Techniques and Applications of Cell Stiffness Testing
    XUE Zhuan-zhuan , HU Huan , Oleksiy Penkov
    Progress in Physics    2025, 45 (2): 55-70.   DOI: 10.13725/j.cnki.pip.2025.02.001
    Abstract361)      PDF (11565KB)(294)      

    The measurement of cell stiffness is of great significance in many fields such as biology, medicine and materials science. In order to understand the biomechanical properties and functions of cells, this review first discusses the important application fields of measuring cell stiffness, including tissue engineering, cartilage disease diagnosis, cancer diagnosis and drug development. Secondly, five major measurement techniques are introduced in detail: micro-pillar array method, optical tweezers method, magnetic tweezers method, atomic force microscopy measurement method (AFM), biomembrane force probe measurement method, and the potential and challenges of these five technologies in practical applications are prospected. With its nanometer-level spatial resolution and piconewton-level force resolution, AFM has become a powerful and unique tool in the field of cell mechanics measurement. Therefore, this review focuses on the application and importance of AFM technology and its related computational model, the Hertz model of microsphere-cell contact, in this field, and further elaborates on the types and characteristics of various existing AFM instruments, as well as their application performance in cell mechanics measurement

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    Measurement methods of magnetic fields in laboratory astrophysics
    SHI Chuanqi , YUAN Dawei , ZHAO Gang
    Progress in Physics    2025, 45 (3): 151-159.   DOI: 10.13725/j.cnki.pip.2025.03.004
    Abstract254)      PDF (5979KB)(540)      

    Magnetic fields are ubiquitous in the universe, such as Earth, Sun, supernova remnants, nebulae, giants, neutron stars, black holes and so on. Despite their widespread presence, there remain numerous unanswered questions about astronomical magnetic fields. For instance, how are initial magnetic fields generated? How do magnetic fields undergo amplification? With the advent of high-power, high-energy laser facilities, laboratory astrophysics provides a new method to the study of astrophysical problems in a controlled laboratory setting, where researchers recreate extreme physical conditions similar to those found in astrophysical objects or their surroundings. The benefits of this method include the short distance, activity, controlled condition and reproducibility. Under the scaling laws, laboratory plasmas can study the origin and amplification of astrophysical magnetic fields. Various measurement techniques are employed in current laboratory studies to assess magnetic fields, including magnetic probes, magnetic tapes, Zeeman effect, Faraday rotation, and proton radiography. Understanding the principles and characteristics of these diagnostic methods is essential in selecting the appropriate method for measuring magnetic fields in experiments. 

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    Research Processes on the Using of Proton Radiography in Laser Driven Magnetic Reconnection Experiments
    HAN Bo
    Progress in Physics    2025, 45 (2): 71-78.   DOI: 10.13725/j.cnki.pip.2025.02.002
    Abstract246)      PDF (9202KB)(266)      

    Magnetic reconnection is an important basic physics progress, and laser driven magnetic reconnection experiment is a major research method. Proton radiography can accurately measure the magnetic filed of plasma, and it has been widely used in laser driven magnetic reconnection experiment. Currently, there are two methods to reconstruct the magnetic field from the experimental proton radiograph, ie. flux analysis and particle tracing. At the beginning, the researches only obtain the magnetic field qualitatively. With the development of technology, at present the accurate strength and distribution of magnetic field in the reconnection region can be reconstructed. It supplies many possibilities in the research of magnetic reconnection. This paper reviews several important results measured by proton radiography in laser driven magnetic reconnection experiments, and aims to provide a reference for researchers in related fields.

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    Axion Insulator and Transport Property
    LI Siqing, DING Yueran, CHEN Chuizhen
    Progress in Physics    2025, 45 (3): 132-150.   DOI: 10.13725/j.cnki.pip.2025.03.003
    Abstract182)      PDF (5137KB)(130)      

    Research on axion insulators in condensed matter physics has generated widespread attention in recent years. Axion insulators exhibit an electromagnetic response similar to that of the hypothetical elementary particle-axion-proposed in high-energy physics, leading to phenomena such as half-quantized surface Hall conductivity or topological magnetoelectric effects in the system. Recently, transport experiments on three-dimensional magnetic topological insulator heterojunctions and intrinsic magnetic topological insulators like MnBi2Te4 have revealed signatures of the existence of axion insulators. However, precise measurement of the half-quantized electromagnetic response of axion insulators remains challenging. In this review, we summarize the theoretical and experimental progress in axion insulator research within magnetic topological insulating materials. We discuss the excitation of halfquantized edge currents in axion insulators due to the bulk-boundary correspondence, as well as a transport theory based on half-magnetic topological insulators for half-quantized Hall conductivity. Finally, we explore disorder-induced phase transitions in axion insulators, including the universality classes of two-dimensional quantum Hall-like conductivity transitions on the surface, and propose methods to detect axion insulators using the universal characteristics of these phase transitions.

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