Progress in Physics

Progress in Physics ›› 2024, Vol. 44 ›› Issue (4): 183-207.doi: 10.13725/j.cnki.pip.2024.04.003

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Electron Transport in Ferroelectric Tunnel Junctions Based on Two-Dimensional Janus GeS Bilayers

SUN Kang 1, 2, BIE Jie 1, 2, 3, LV Yang-yang 4, 5, CHEN Shuang 2 , FA Wei 1   

  1. 1. National Laboratory of Solid State Microstructures and Department of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; 2. Kuang Yaming Honors School, Nanjing University, Nanjing 210023, China; 3. Department of Materials Science, and Engineering, City University of Hong Kong, Hong Kong 999077, China; 4. National Laboratory of Solid State Microstructures and Department of Materials Science, and Engineering, Nanjing University, Nanjing 210093, China; 5. Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
  • Online:2024-08-20 Published:2024-08-19

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Abstract:

The two-dimensional van der Waals (2D vdW) Janus materials have different atomic species on both sides to ensure their structural asymmetry and inherent out-of-plane polarizations. A novel 2D vdW Janus material, GeS, was found to develop ferroelectric tunnel junctions (FTJs) with low energy consumption and high response speed. Based on our first-principles calculations, it is found that the Janus GeS bilayers own three stacking modes, and their lateral sliding and vertical displacement can both modulate the electron transport in GeS bilayer-based tunnel junctions. In addition, the FTJ based on GeGe-contacting GeS bilayer exhibits the highest on/off ratio. Our study expands the concept of sliding ferroelectricity to a new class of 2D vdW Janus materials and reveals the possible resistance switching mechanism of these materials in real devices. Furthermore, it provides theoretical guidance for the design of low-energy-consumption and fast-switching nanodevices based on 2D vdW Janus materials.

Key words: two-dimensional van der Waals Janus materials, sliding ferroelectricity, ferro-electric tunnel junctions, resistance switching

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