物理学进展

物理学进展 ›› 2025, Vol. 45 ›› Issue (1): 47-54.doi: 10.13725/j.cnki.pip.2025.01.003

所属专题： 2025年, 第45卷

• • 上一篇    

宏量制备导电属性可控的高质量单壁碳纳米管

杨可汉 ，王 超 ，袁国文，高力波   

  1. 南京大学物理学院，固体微结构物理国家重点实验室，南京 210093
  • 出版日期:2025-02-20 发布日期:2025-04-21

Mass Production of High-Quality Single-Wall Carbon Nanotubes with Controllable Conductive Properties

YANG Ke-han , WANG Chao , YUAN Guo-wen , GAO Li-bo   

  1. National Laboratory of Solid State Microstructures, School of physics, Nanjing University, Nanjing 210093, China
  • Online:2025-02-20 Published:2025-04-21
  • Supported by:
    国家自然科学基金项目 (No. 52425203、12104218) 和江苏省攀登项目 (No. BK20240008) 的

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摘要：

单壁碳纳米管 (SWCNTs) 由于其优异的电导、机械和热学性能，具备广泛应用前景。目 前，浮动催化剂化学气相沉积法 (FCCVD) 是大规模制备 SWCNTs 的常用方法。然而，利用该方 法获得的 SWCNTs 的纯度和质量不足，并且样品的导电属性可控性差，金属单壁碳纳米管 (mSWCNTs) 与半导体单壁碳纳米管 (s-SWCNTs) 并存，限制了其进一步应用。为了连续化生长高 质量、高纯度，具备单一导电属性的 SWCNTs，本论文提出了一种通过放置管塞将 SWCNTs 滞 留在高温区以实现持续生长，并加入电场实现单一导电属性的 SWCNTs 选择性生长的方法，最终 得到高纯度的半导体富集的 SWCNTs。我们通过光学、热重分析和扫描电子显微镜对 SWCNTs 进行系统的测量与分析，研究 SWCNTs 纯度与 s-SWCNTs 的占比。该工作为大规模制备高质量 高纯度的 SWCNTs 提供了方案，有望加速其工业化应用。

关键词: 单壁碳纳米管；浮动催化剂化学气相沉积法；可控制备；半导体性 

Abstract:

Single-wall carbon nanotubes (SWCNTs) are highly promising due to their exceptional electrical conductivity, mechanical strength, and thermal properties. Currently, the floating catalyst chemical vapor deposition (FCCVD) method is a common approach for large-scale production of SWCNTs. However, the purity and quality of SWCNTs obtained by this method are insufficient, and the electrical properties of the samples are poorly controllable. The coexistence of metallic single-walled carbon nanotubes (m-SWCNTs) and semiconducting single-walled carbon nanotubes (s-SWCNTs) limits further applications. To achieve continuous growth of high-quality, high-purity SWCNTs with a controllable electrical property, this paper proposes a method that involves placing a plug to retain SWCNTs in the high-temperature zone for sustained growth and applying an electric field to selectively grow SWCNTs with a single electrical property, ultimately resulting in high-purity semiconducting-enriched SWCNTs. We systematically analyze the purity of SWCNTs and the proportion of s-SWCNTs using optical images, thermogravimetric analysis, and scanning electron microscopy. This work provides a solution for the large-scale production of high-quality, high-purity SWCNTs and is expected to accelerate the industrial application of SWCNTs.

Key words: single-wall carbon nanotubes, floating catalytic chemical vapor deposition method, controllable preparation, semiconducting 

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