物理学进展

物理学进展 ›› 2025, Vol. 45 ›› Issue (3): 118-131.doi: 10.13725/j.cnki.pip.2025.03.002

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超越硅基器件的二维晶体管：从理论到实验

李 鸿 1，徐 琳 2，邱晨光 2，吕 劲 3   

  1. 1. 北方工业大学机械与材料工程学院，北京 100144 2. 北京大学电子学院，纳米器件物理与化学教育部重点实验室，碳基电子学中心，北京 100871 3. 北京大学物理学院，人工微结构和介观物理全国重点实验室，北京 100871
  • 出版日期:2025-04-20 发布日期:2025-04-21
  • 基金资助:
    国家自然科学基金 (No. 12274002、91964101、 61971009、6212200)， 国 家 科 技 支 撑 计 划 (No. 2022YFA1203904、2021YFA0717400) 和 北 京 市 自 然科学基金 (No.4212046) 资助的课题．

Two-Dimensional Transistors beyond Silicon Counterparts: From Theory to Experiment

LI Hong 1 , XU Lin 2 , QIU Chenguang 2 , LU Jing 3   

  1. 1. College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, China 2. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China 3. State Key Laboratory of Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China 
  • Online:2025-04-20 Published:2025-04-21

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摘要：

由于严重的短沟道效应，硅基晶体管在栅长小于 10 nm 的时候，不能很好地工作，摩尔定 律面临失效的风险。比起体半导体材料，二维材料具有更好的静电特性和载流子迁移率。密度泛 函理论和非平衡格林函数方法结合的第一性原理量子输运模拟是描述纳米尺度晶体管输运的最精 确的理论工具。基于第一性原理量子输运模拟预测理想状态下的二维材料晶体管的性能优于硅基 晶体管，能够满足国际半导体技术线路图及国际器件和系统线路图未来十年的需求，能延续摩尔 定律到 10 nm 以下栅长。本文介绍了在二维晶体管领域近两年实验上取得的重大突破，包括将 栅极长度缩小到埃米尺度，将电极接触电阻降低到接近理论量子极限，以及制备出高质量的超薄 电介质。当良好的欧姆接触和超薄的介电层同时实现时，在 10 nm 栅长的 InSe 晶体管中观察到 了理论预测的超越硅基晶体管的性能。 

关键词: 二维晶体管, 第一性原理量子输运模拟, 从理论到实验, 超越硅基 ,

Abstract:

Due to the severe short-channel effects, silicon-based transistors cannot work well when the gate length is shorter than 10 nm. Moore’s law is at risk of failure. Compared to bulk semiconductor materials, two-dimensional (2D) materials own better electrostatic features and higher carrier mobilities. To describe the transport properties of transistors at the nanometer scale, the first-principles quantum transport simulation based on density functional theory coupled with non-equilibrium Green’s function method is the most precise theoretical tool. The device performances of ideal 2D transistors are predicted to surpass those of silicon-based transistors based on the first-principles quantum transport simulation, which can meet the International Technology Roadmap for Semiconductors (ITRS) and International Roadmap for Device and Systems (IRDS) requirements for the next decade and extend Moore’s law to sub-10 nm gate lengths . We review dramatic experimental breakthroughs on 2D transistors in the recent two years, including shrinking the gate length to the Angstrom scale, descending the electrode contact resistance to the quantum limit, and fabricating high-quality and ultrathin dielectric. When Ohmic contacts and high-quality ultrathin dielectric layers are simultaneously realized, theoretically predicted superior performances beyond silicon are observed in 10-nmgate InSe transistors experimentally. 

Key words: 2D transistor, first-principles quantum transport simulation, from theory to experiment, beyond silicon

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