物理学进展

物理学进展 ›› 2024, Vol. 44 ›› Issue (4): 183-207.doi: 10.13725/j.cnki.pip.2024.04.003

所属专题： 2024年, 第44卷

• • 上一篇    

基于二维 Janus GeS 双层铁电隧道结的电子输运

孙 康 1, 2，别 洁 1, 2, 3，吕洋洋 4, 5，陈 爽 2，法 伟 1   

  1. 1. 南京大学固体微结构物理国家重点实验室，物理学院和人工微结构科学与技术协同创新中心，南京 210093; 2. 南京大学匡亚明学院，南京 210023; 3. 香港城市大学材料科学与工程学系，香港，999077; 4. 南京大学材料科学与工程学院，固体微结构物理国家重点实验室，南京 210093; 5. 东南大学量子材料与器件教育部重点实验室，南京 211189 
  • 出版日期:2024-08-20 发布日期:2024-08-19

Electron Transport in Ferroelectric Tunnel Junctions Based on Two-Dimensional Janus GeS Bilayers

SUN Kang 1, 2, BIE Jie 1, 2, 3, LV Yang-yang 4, 5, CHEN Shuang 2 , FA Wei 1   

  1. 1. National Laboratory of Solid State Microstructures and Department of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; 2. Kuang Yaming Honors School, Nanjing University, Nanjing 210023, China; 3. Department of Materials Science, and Engineering, City University of Hong Kong, Hong Kong 999077, China; 4. National Laboratory of Solid State Microstructures and Department of Materials Science, and Engineering, Nanjing University, Nanjing 210093, China; 5. Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
  • Online:2024-08-20 Published:2024-08-19

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摘要：

二维范德华 Janus 材料两侧为不同原子，使得其具有内禀的结构不对称性和面外极化。一 类新型的二维 Janus 材料 GeS 被发现可用于制备低能耗、高响应速度的铁电隧道结。基于第一性 原理计算，我们发现 Janus GeS 双层有三种堆叠模式，它们的横向滑动和垂直位移都可以调节隧 道结中的电子输运。此外，基于 GeGe 接触的 GeS 双层的铁电隧道结表现出最高的开/关比。我 们的研究将滑移铁电的概念扩展到一类新型的二维范德华 Janus 材料，并揭示了这些材料在实际 器件中可能的电阻开关机制。我们的工作为基于二维范德华 Janus 材料的低能耗、快速开关纳米 器件的设计提供了理论指导。 

关键词: 二维范德华 Janus 材料, 滑移铁电性, 铁电隧道结, 阻态开关

Abstract:

The two-dimensional van der Waals (2D vdW) Janus materials have different atomic species on both sides to ensure their structural asymmetry and inherent out-of-plane polarizations. A novel 2D vdW Janus material, GeS, was found to develop ferroelectric tunnel junctions (FTJs) with low energy consumption and high response speed. Based on our first-principles calculations, it is found that the Janus GeS bilayers own three stacking modes, and their lateral sliding and vertical displacement can both modulate the electron transport in GeS bilayer-based tunnel junctions. In addition, the FTJ based on GeGe-contacting GeS bilayer exhibits the highest on/off ratio. Our study expands the concept of sliding ferroelectricity to a new class of 2D vdW Janus materials and reveals the possible resistance switching mechanism of these materials in real devices. Furthermore, it provides theoretical guidance for the design of low-energy-consumption and fast-switching nanodevices based on 2D vdW Janus materials.

Key words: two-dimensional van der Waals Janus materials, sliding ferroelectricity, ferro-electric tunnel junctions, resistance switching

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