物理学进展

物理学进展 ›› 2026, Vol. 46 ›› Issue (1): 13-21.doi: 10.13725/j.cnki.pip.2026.01.002

所属专题： 2026年, 第46卷

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外延 Bi(110)/VTe2 双层异质结构的原子尺度表征

汪琪玮1，李绍春1,2   

  1. 1. 南京大学物理学院，固体微结构物理国家重点实验室，江苏省物理科学研究中心，人工微 结构科学与技术协同创新中心，江苏省级纳米技术重点实验室，南京 210093 2. 合肥国家实验室, 合肥 230088
  • 出版日期:2026-02-20 发布日期:2026-02-24
  • 基金资助:
    国家重点研发计划（批准号：2021YFA1400403）、国家自然科学基金（批准号：12374183，92165205）、江苏省自然科学基金（批准号：BK20233001）、量子科学和技术创新计划（批准号：2021ZD0302800）以及中央高校基本科研业务费（批准号：020414380207）。

Atomic-scale characterization of epitaxial Bi(110)/VTe2 bilayer heterostructure

WANG Qiwei1, LI Shaochun1,2   

  1. 1. National Laboratory of Solid State Microstructures, Jiangsu Physical Science Research Center, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Nanotechnology, School of Physics, Nanjing University, Nanjing 210093, China 2. Hefei National Laboratory, Hefei 230088, Chin
  • Online:2026-02-20 Published:2026-02-24
  • Supported by:
    National Key Research and Development Program of China (Grant No. 2021YFA1400403), the National Natural Science Foundation of China (Grant Nos. 12374183, 92165205), the Natural Science Foundation of Jiangsu Province (Grant No. BK20233001), the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302800) and the Fundamental Research Funds for the Central Universities (Grant No. 020414380207).

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摘要：

拓扑与磁性之间的相互作用可以在拓扑材料中诱导出奇异的特性。二维铋因其具有强自旋 轨道耦合的拓扑态而被广泛研究，而单层 1T-VTe2 则被理论预测具有本征磁性，同时在实验上也 获得了依据。本工作通过分子束外延技术成功构建了由二维 Bi(110) 单层与 1T-VTe2 单层组成的 垂直异质结构。扫描隧道显微镜测量表明铋的生长优先沿 VTe2 单层台阶边缘进行，在 VTe2 单 层表面形成 Bi(110) 单层，其边缘区域伴随铋双层结构。该 Bi(100)/VTe2 异质结构呈现出特定 的晶格匹配关系，并具有清晰的莫尔周期性。扫描隧道谱测量进一步发现在 Bi(110)/VTe2 异质 结的边界处存在局域态密度的抑制现象。通过分析 Bi(110) 边界的原子结构，我们发现该效应并 非源于此前提出的 Bi(110) 台阶边缘原子重构，而很可能与 VTe2 单层的磁特性密切相关。

关键词:  , Bi(100)/VTe2 异质结；莫尔图案；边界态；分子束外延；扫描隧道显微学

Abstract:

Interplay between topology and magnetism can give rise to exotic properties in topological materials. Two-dimensional bismuth has been extensively studied owing to its topological states with a strong spin-orbit coupling, and 1T-VTe2 monolayer theoretically predicted to host an intrinsic magnetism as experimentally suggested. In this work, we successfully constructed a vertical heterostructure composed of the two-dimensional Bi(110) monolayer and 1T-VTe2 monolayer by using molecular beam epitaxy (MBE). Scanning tunneling microscopy (STM) measurements revealed that the growth of Bi preferably occurs along the step edges of the VTe2 monolayer, forming a Bi(110) monolayer on top of the VTe2 monolayer next to a peripheral Bi bilayer. The Bi(100)/VTe2 heterostructure exhibits a specific lattice registry with a well-defined moiré periodicity. Scanning tunneling spectroscopy (STS) measurements further unveiled an universal suppression in the local density-of-states at the boundary of the Bi(110)/VTe2 bilayer. By examining the atomic structures of Bi(110) boundaries, we found this effect does not originate from the previously proposed atomic reconstruction at the step edge of Bi(110), but is likely related to the magnetic properties of the VTe2 monolayer. 

Key words: Bi/VTe2 heterostructure, moiré pattern, edge state, molecular beam epitaxy; scanning tunneling microscopy

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