Abstract:

Flat band has attracted more and more interest in recent years, motivated by its discovery in twisted bilayer graphene (TBG). In this work, we report our study of the impurity effect on this flat band system, which is an important issue for real materials. Employing the Lanczos recursive method, we solve the local density of states (LDOS) around a potential impurity. We find for large impurity size, a series of bound states are formed inside the impurity, and the flat band peak in LDOS is suppressed near the impurity boundary and shifted by the impurity potential deep inside the impurity. As the impurity size becomes smaller, the effect on the flat band becomes weaker, as anticipated from the large scale of the underlying Wannier function. This property distinguishes with the usual flat band systems with small localized Wannier orbitals, and indicates the flat band in TBG is more stable against small-size impurities. 

Key words: impurity effect, twisted bilayer graphene, local density of states, flat band