物理学进展

物理学进展 ›› 2026, Vol. 46 ›› Issue (3): 107-113.doi: 10.13725/j.cnki.pip.2026.03.001

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基于绝缘覆盖层的薄膜铌酸锂脊型波导高温极化技术

苏雅雯 1，姜 楠 1，陈海伟 1, 2，赵 刚 1，祝世宁 1，胡小鹏 1   

  1. 1. 南京大学固体微结构物理全国重点实验室，现代工程与应用科学学院，物理学院，南京 210093; 2. 苏州职业技术大学电子信息工程学院，苏州 21510
  • 收稿日期:2026-02-26 修回日期:2026-03-10 接受日期:2026-03-12 出版日期:2026-06-20 发布日期:2026-05-21
  • 基金资助:
    国家重点研发计划项目 (No.2024YFA1408900, No.2022YFA1205100)、 国 家自然科学基金项目 (No.12192251, No.62288101)、量 子科学技术创新计划 (No.2021ZD0300700) 和江苏省科 技重大专项 (No.BG2025034) 

Electrical-field poling of thin-film lithium niobate ridge waveguide with an insulated cladding layer at elevated temperature

SU Yawen 1, JIANG Nan 1, CHEN Haiwei 1, 2, ZHAO Gang 1, ZHU Shining 1, HU Xiaopeng1   

  1. 1. National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, School of Physics, Nanjing University, Nanjing 210093, China; 2. College of Electronic and Engineering, Suzhou Polytechnic University, Suzhou 215104, China
  • Received:2026-02-26 Revised:2026-03-10 Accepted:2026-03-12 Online:2026-06-20 Published:2026-05-21

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摘要：

基于铁电畴工程的薄膜铌酸锂在量子光学和非线性光学领域具有重要的应用前景。在 x 切 薄膜铌酸锂脊型波导的周期极化技术中，波导深度方向贯穿铁电畴结构的制备仍有待攻克。本研究提出了一种基于二氧化硅覆盖层的铌酸锂脊型波导高温辅助极化技术。引入二氧化硅覆盖层可使电场在脊形波导结构内部更加均匀，实现深度方向贯穿畴结构的制备；采用高温极化，可以降低二氧化硅层的电阻率与铌酸锂层的矫顽场，在合适的外加电压下实现波导区域内有效的畴反转。 实验上采用优化的温度和外加电压等优化参数条件，获得了沿波导厚度方向较为完整且周期稳定的铁电畴结构。本文中发展的技术可为研制高性能的薄膜铌酸锂非线性光子芯片提供支撑。

关键词: 薄膜铌酸锂, 脊型波导, 铁电畴反转, 绝缘覆盖层, 高温电场极化

Abstract:

Ferroelectric-domain-engineered thin-film lithium niobate (TFLN) holds significant potential for applications in quantum optics and nonlinear photonics. In periodically poled x-cut TFLN ridge waveguides, however, achieving complete depth-wise domain inversion within the ridge waveguide remains a critical challenge. In this work, we propose a high-temperature-assisted poling technique combined with a SiO2 cladding layer for lithium niobate ridge waveguides. The introduction of a SiO2 overlayer enhances the uniformity of the electric field distribution within the ridge structure, enabling the formation of depth-penetrating ferroelectric domains. Meanwhile, elevated-temperature poling reduces both the resistivity of the SiO2 layer and the coercive field of lithium niobate, thereby facilitating effective domain inversion in the waveguide region under appropriate applied voltages. By optimizing the poling temperature and external voltage conditions, periodic ferroelectric domain structures with high depth uniformity and well-defined periodicity were experimentally achieved. The proposed technique provides a viable route toward the fabrication of high-performance nonlinear photonic chips based on TFLN.

Key words: thin-film lithium niobate, ridge waveguide, ferroelectric domain inversion, insulated cladding layer, high-temperature electric-field poling

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