Negative Coulomb drag between graphene quantum Hall edges

doi:10.13725/j.cnki.pip.2026.01.001

Progress in Physics ›› 2026, Vol. 46 ›› Issue (1): 1-12.doi: 10.13725/j.cnki.pip.2026.01.001

Special Issue: 2026年, 第46卷

Negative Coulomb drag between graphene quantum Hall edges

SONG Junwei¹, GAN Qikang¹, ZHU Wang¹, WATANABE Kenji², TANIGUCHI Takashi³, YU Geliang1, WANG Lei^1,4

1. National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing 210093, China 2. Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan 3. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan 4. Jiangsu Physical Science Research Center, Nanjing 210093, China

Online:2026-02-20 Published:2026-02-24
Supported by:
National Key Projects for Research and Development of China (Grant Nos. 2022YFA1204700, 2021YFA1400400), National Natural Science Foundation of China (Grant No. 12525403), Natural Science Foundation of Jiangsu Province (Grant Nos. BK20220066, BK20233001) and Program for Innovative Talents and Entrepreneur in Jiangsu (Grant No.JSSCTD202101). K.W. and T.T. acknowledge support from the JSPS KAKENHI (Grant Numbers 21H05233 and 23H02052) and World Premier International Research Center Initiative (WPI), MEXT, Japan.

Abstract

Abstract:

Coulomb drag refers to the phenomenon in which a current driven through one conducting layer induces a voltage nearby, electrically isolated layer sorely through interlayer Coulomb interactions between charge carriers. It has been extensively studied in various systems, including parallel nanowires, double quantum wells, and double-layer graphene. Here, we report the observation of Coulomb drag in a novel system consisting of two graphene layers separated laterally by a 30 nm gap within the material plane, exhibiting behavior distinct from that in vertical graphene heterostructures. Our experiments reveal pronounced negative drag resistances under an out-of-plane magnetic field at the quantum Hall edges, reaching a maximum when the carrier densities in both graphene layers are tuned to the charge neutrality point via gate voltages. Our work establish two separate and spatially closed quantum Hall edge modes as a new platform to explore electronic interaction physics between one dimensional systems.

Key words: negative Coulomb drag, quantum Hall edges, van der Waals heterostructures

CLC Number:

O469

SONG Junwei, GAN Qikang, ZHU Wang, WATANABE Kenji, TANIGUCHI Takashi, YU Geliang, WANG Lei. Negative Coulomb drag between graphene quantum Hall edges[J]. Progress in Physics, 2026, 46(1): 1-12.

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Negative Coulomb drag between graphene quantum Hall edges

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