Single-wall carbon nanotubes (SWCNTs) are highly promising due to their exceptional electrical conductivity, mechanical strength, and thermal properties. Currently, the floating catalyst chemical vapor deposition (FCCVD) method is a common approach for large-scale production of SWCNTs. However, the purity and quality of SWCNTs obtained by this method are insufficient, and the electrical properties of the samples are poorly controllable. The coexistence of metallic single-walled carbon nanotubes (m-SWCNTs) and semiconducting single-walled carbon nanotubes (s-SWCNTs) limits further applications. To achieve continuous growth of high-quality, high-purity SWCNTs with a controllable electrical property, this paper proposes a method that involves placing a plug to retain SWCNTs in the high-temperature zone for sustained growth and applying an electric field to selectively grow SWCNTs with a single electrical property, ultimately resulting in high-purity semiconducting-enriched SWCNTs. We systematically analyze the purity of SWCNTs and the proportion of s-SWCNTs using optical images, thermogravimetric analysis, and scanning electron microscopy. This work provides a solution for the large-scale production of high-quality, high-purity SWCNTs and is expected to accelerate the industrial application of SWCNTs.
