Coulomb drag refers to the phenomenon in which a current driven through one conducting layer induces a voltage nearby, electrically isolated layer sorely through interlayer Coulomb interactions between charge carriers. It has been extensively studied in various systems, including parallel nanowires, double quantum wells, and double-layer graphene. Here, we report the observation of Coulomb drag in a novel system consisting of two graphene layers separated laterally by a 30 nm gap within the material plane, exhibiting behavior distinct from that in vertical graphene heterostructures. Our experiments reveal pronounced negative drag resistances under an out-of-plane magnetic field at the quantum Hall edges, reaching a maximum when the carrier densities in both graphene layers are tuned to the charge neutrality point via gate voltages. Our work establish two separate and spatially closed quantum Hall edge modes as a new platform to explore electronic interaction physics between one dimensional systems.