Progress in Physics ›› 2025, Vol. 45 ›› Issue (5): 223-249.doi: 10.13725/j.cnki.pip.2025.05.002
Special Issue: 2025年, 第45卷
Previous Articles Next Articles
HE Xinyu, BAO Chunxiong
Online:
Published:
Abstract:
Metal halide perovskites as a new generation of semiconductor optoelectronic materials, have great potential for applications in solar cells, light-emitting diodes (LEDs), and photodetectors. Typical perovskite photovoltaic devices are mainly based on polycrystalline thin-films. However, the numerous grain boundaries and high defect density in polycrystalline thin films hinder the improvement of device performance. Perovskite thin single-crystalline materials, due to their superior optoelectrical properties such as lower defect density and longer carrier diffusion length compared to polycrystalline thin films, have attracted great attentions in solar cells, photodetectors, X-ray detectors, and lasers. This review systematically introduces the preparation techniques, optimization strategies (component engineering, additive engineering, interface passivation) and device application progress of perovskite thin single-crystalline materials. It focuses on the growth methods and performance regulation of perovskite thin single-crystalline materials. Additionally, it discusses the development of perovskite thin single-crystalline materials as solar cells, photodetectors, X-ray detectors, and as light-emitting devices. Subsequently, it introduces the patterning methods of perovskite thin single-crystal, including inkjet printing and patterning template-induced arraying techniques, as well as the challenges, and looks forward to the future development directions of perovskite thin single-crystal devices.
Key words: perovskite, thin single crystal, solar cell, detector, X-ray detector, light-emitting device
CLC Number:
O59
HE Xinyu, BAO Chunxiong. Advances in optoelectronic devices based on metal halide perovskite thin single crystals[J]. Progress in Physics, 2025, 45(5): 223-249.
0 / / Recommend
Add to citation manager EndNote|Ris|BibTeX
URL: https://pip.nju.edu.cn/EN/10.13725/j.cnki.pip.2025.05.002
https://pip.nju.edu.cn/EN/Y2025/V45/I5/223