Received date: 2024-07-07
Revised date: 2024-10-16
Accepted date: 2024-10-25
Online published: 2025-02-20
Supported by
National Natural Science Foundation of China (Grants No. 12174220
and No. 12074217), the Shandong Provincial Science
Foundation for Excellent Young Scholars (Grant No.
ZR2023YQ001), the Taishan Young Scholar Program
of Shandong Province, and the Qilu Young Scholar Program of Shandong University
Higher-order band topology not only enriches our understanding of topological phases but also unveils pioneering lower-dimensional boundary states, which harbors substantial potential for next-generation device applications. The distinct electronic configurations and tunable attributes of two-dimensional materials position them as a quintessential platform for the realization of second-order topological insulators (SOTIs). This article provides an overview of the research progress in SOTIs within the field of two-dimensional electronic materials, focusing on the characterization of higher-order topological properties and the numerous candidate materials proposed in theoretical studies. These endeavors not only enhance our understanding of higher-order topological states but also highlight potential material systems that could be experimentally realized.
FENG Xiao-ran , NIU Cheng-wang ∗ , HUANG Bai-biao , DAI Ying . Second-Order Topological Insulators in 2D Electronic Materials [J]. Progress in Physics, 2025 , 45(1) : 1 -31 . DOI: 10.13725/j.cnki.pip.2025.01.001
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