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第 34 卷 第 5 期, pp.226-234  (2014) [ 9页 ]

快恢复二极管的发展

黄昊
湖南大学电气与信息工程学院

沈征
湖南大学电气与信息工程学院

王俊
College of Information and Electrical Engineering, Hunan University, Chang Sha, Hunan 410082, China

王达名
湖南大学电气与信息工程学院

2014/12/17 发布

二极管作为最基本的器件,在电子电路中的应用非常广泛。而随着IGBT 和MOS 管等器件的发展,对二极管的方向恢复性能的要求越来越高。本文介绍了提高快恢复二极管恢复特性的两种主流技术的发展,即载流子寿命控制技术和发射极效率控制技术。并通过仿真对阳极发射效率控制技术进行了验证,最后对SiC 材料的二极管进行了介绍和展望。
Power diodes are widely used in power electronics systems as the popular switching devices. Power diodes in IGBT (Insulated Gate Bipolar Transistor) and MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) modules are extremely important components, for which low loss and fast-soft recovery characteristics are indispensable. This paper reviews the two major technologies which improve the reverse recovery of power diodes, namely the carrier lifetime killing and the emitter e±ciency control. Furthermore, simulations are carried out to verify the emitter e±ciency control. Finally, the promising reverse recovery of SiC diodes will be introduced and forecasted.

全文: [PDF]
中图分类号: O47
关键词: 快恢复二极管;载流子寿命控制;发射极效率;碳化硅二极管
FRD; carrier lifetime killing; emitter e±ciency control; SiC diodes